Sunday, August 3, 2008


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Earlier this year Intel has announced the introduction of the next-generation processing technology codenamed Montevina, aka Intel Centrino 2, designed to increase notebooks’ performance and the battery life. The platform integrates Wi-Fi and WiMAX modules for high-speed wireless connectivity, as well as other options with 40% smaller in form, delivering the same performance to subnotebooks.

OCZ Technology Group, the specialist in high speed DDR and RDRAM memory modules, announced its new DDR3 SODIMM memories with support for the next-generation Intel platform. Th new modules are meant to bring very high performance and reliability to notebook computers, reducing the power consumption and in the same time increasing speed and bandwidth. OCZ’s DDR3 SODIMM modules will be used in the upcoming professional and gaming notebooks that will arrive in a few weeks on the market.

The 2 models announced are the PC3-8500 and PC3-10666, which provide increased frequencies at lower voltage requirements.

“The Centrino 2 platform is a logical extension of Intel’s efforts spearheading DDR3 acceptance in the enthusiast segment in the desktop sector,” declared Dr. Michael Schuette, VP of Technology Development at OCZ Technology. “From a technical standpoint, DDR3 memory technology is far superior to DDR2, from the higher frequency range resulting in better overall system performance to the energy savings at idle stemming from loss-less termination to the supply-voltage level and resulting in paramount energy savings in the typical notebook usage pattern.”

The OCZ PC3-8500 DDR3 SODIMM will be available in 2GB and 4GB dual-channel versions, characterized by 1066MHz, unbuffered, 1.5Volts, 200 Pin DIMM and lifetime warranty. 8-8-8-27 timings at 1.5V means minimum power consumption.

OCZ PC3-10666 DDR3 SODIMM modules will also feature 2GB or 4GB capacity, unbuffered, 1.5Volts, 200 Pin DIMM, 1333MHz and 9-9-9-24 timings.

Double-data-rate three synchronous dynamic random access memory modules are an improvement of the DDR2 SDRAM, having the main characteristic the capability to run the I/O bus at 4 times the speed of its memory cells, leading to faster bus speeds and higher peak throughput. In addition, the power consumed, compared to the DDR2, is of 30% lower. DDR2 uses 1.8V while the DDR3 only 1.5V.

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